DESCRIPTION
The SPN4412 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .

FEATURES
◆ 30V/6.8A,RDS(ON)= 28mΩ@VGS= 10V
◆ 30V/5.6A,RDS(ON)= 36mΩ@VGS= 4.5V
◆ Super high density cell design for extremely low RDS (ON)
◆ Exceptional on-resistance and maximum DC current capability
◆ SOP – 8P package design

APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter