SPB08P06P Даташит - Inchange Semiconductor
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SPB08P06P
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Inchange Semiconductor
• FEATURES
• Static drain-source on-resistance:
RDS(on)≤300mΩ(@VGS= -10V; ID= -6.2A)
• Advanced trench process technology
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
• APPLICATIONS
• Fast switching application.
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