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SKW15N120(2013) Даташит - Infineon Technologies

SKW15N120 image

Номер в каталоге
SKW15N120

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14 Pages

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508.6 kB

производитель
Infineon
Infineon Technologies Infineon

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

• Lower Eoff compared to previous generation
• Short circuit withstand time – 10 μs
• Designed for:
   - Motor controls
   - Inverter
   - SMPS
• NPT-Technology offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switching capability
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/


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производитель
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies

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