General Description
This P-Channel –2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (–2.5V to –8V).

FEATUREs
• –2.5 A, –12 V, RDS(ON) = 110 mΩ @ VGS = –4.5 V.
                          RDS(ON) = 180 mΩ @ VGS = –2.5V.
• Extended VGSS range (±8V) for battery applications
• Low gate charge (4.6nC typical)
• High performance trench technology for extremely low RDS(ON)
• Low profile TSSOP-8 package

APPLICATIONs
• Load switch
• Motor drive
• DC/DC conversion
• Power management