Description
This N-channel HEXFET® Power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications
The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.
   
● N-Channel MOSFET
● Low On-Resistance
● Low Gate Charge
● Surface Mount
● Logic Level Drive