Product Description
Stanford Microdevices’ SGA-8343 is a high performance SiGe HBT amplifier designed for operation from DC to 6 GHz. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device is easily matched as ΓOPT is very close to 50 ohms. This device provides high gain, low NF, and excellent linearity at a low cost.

Product Features
• 6 GHz Useful Bandwidth
• Low FMIN: 0.9 dB @ 0.9 GHz
                     1.1 dB @ 1.9 GHz
• High Gain (Gmax): 24 dB @ 0.9 GHz
                                 19 dB @ 1.9 GHz
• Easily Matched with |ΓOPT| = 0.17 @ 1.9 GHz
• OIP3 = +28.5 dBm, P1dB = +13 dBm
• Low Cost High Performance SiGe HBT

APPLICATIONs
• LNA for Wireless Infrastructure
• Fixed Wireless Infrastructure
• Wireless Data
• Driver Stage for Low Power Applications
• Oscillators