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SBRS8190T3G Даташит - ON Semiconductor

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SBRS8190T3G

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  2018  

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4 Pages

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ONSEMI
ON Semiconductor ONSEMI

Schottky Power Rectifier
Surface Mount Power Package

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state-of-the-art devices have the following features:


FEATUREs
• Small Compact Surface Mountable Package with J-Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• High Blocking Voltage − 100 Volts
• 175°C Operating Junction Temperature
• Guardring for Stress Protection
• AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free Devices

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
   Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
   260°C Max. for 10 Seconds
• Shipped in 12 mm Tape and Reel, 2,500 units per reel
• Cathode Polarity Band

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