SB039C025-1-W-AG Даташит - Transys Electronics Limited
Номер в каталоге
SB039C025-1-W-AG
Компоненты Описание
Other PDF
no available.
PDF
page
1 Pages
File Size
152.1 kB
производитель
Transys Electronics Limited
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
Номер в каталоге
Компоненты Описание
PDF
производитель
Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 0.5 Amp, 0.34VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 1 Amp, 0.40VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 20 Volt, 1 Amp, 0.35VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 51 Mils, 25 Volt, 1 Amp, 0.33VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 0.5 Amp, 0.36VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 65 Mils, 25 Volt, 3 Amp, 0.38VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF
Transys Electronics Limited
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