производитель
Mospec Semiconductor
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 150℃ Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O
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производитель
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DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Schottky Barrier Rectifiers
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD