DESCRIPTION
   RT3A66M is a sillicon PNP epitaxial type dual transistor. It is designed for differential amplify application.

FEATURE
● High Vceo Vceo=-150V
● Good two elements characteristics
   hFE1/hFE2=1.0 typ
   ｜ VBE1-VBE2｜ =2mV typ

APPLICATION
   For differential amplify application.