RQG2001URAQF Даташит - Renesas Electronics
Номер в каталоге
RQG2001URAQF
Компоненты Описание
Other PDF
no available.
PDF
page
27 Pages
File Size
237.8 kB
производитель
Renesas Electronics
Features
• Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
• Low Distortion and Excellent Linearity
IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz
• High Transition Frequency
fT = 20 GHz typ.
• High Collector to Emitter Voltage
VCEO = 5 V
Номер в каталоге
Компоненты Описание
PDF
производитель
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
Renesas Electronics
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
Renesas Electronics
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
Renesas Electronics
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