Description
The Raytheon RMM5030 is an X-band two-stage GaAs MMIC power
amplifier operating over 9-10 GHz which can be configured to provide either 34 dBm of minimum saturated power into 50 ohms or 37 dBm into 25 ohms. This unique chip configuration incorporates a pair of parallel channels each containing two reactively matched stages consisting of 2x1400 µm FETs driving 4x2000 µm FETs for a total FET periphery of 21.6mm. Either channel can be operated as an independent amplifier in a 50 ohm system to provide 34 dBm power output with the adjacent channel retained as a spare. Alternatively the channels can be operated in parallel, with 25 ohm terminating impedances, to provide 37 dBm power output. In this case an external transformer is required for operation in a 50 ohm system. The FETs are fabricated using Raytheon’s proven 0.5 µm Ti/Pt/Au gate MESFET process. The RMM5030 is ideally suited for power stage applications where limited space is available. It also allows the user to bias stages individually to customize performance and maximize
amplifier efficiency.

FEATUREs
■ 37.8 dBm typical saturated power into 25 Ω @ 2 dB compression
■ Power added efficiency is greater than 20%
■ 14 dB small signal gain
■ Separate stage biasing to maximize efficiency
■ Input match VSWR is less than 2.0:1
■ Via hole grounding
■ Chip Size: 223 mils x 213 mils