RG1G Даташит - General Semiconductor
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RG1G
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* High temperature metallurgically bonded construction
* Hermetically sealed package
* Glass passivated cavity-free junction
* 1.0 Ampere operation at TA=55°C with no thermal runaway
* Typical IRless than 0.1µA
* Capable of meeting environmental standards of MIL-S-19500
* Fast switching for high efficiency
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