The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
The RFG60P06E incorporates ESD protection and is designed to withstand 2kV (Human Body Model) of ESD.

FEATUREs
• 60A, 60V
• rDS(ON) = 0.030Ω
• Temperature Compensating PSPICE® Model
• 2kV ESD Rated
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175°C Operating Temperature
• Related Literature