These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors.

FEATUREs
• 50A, 50V
• rDS(ON) = 0.022Ω
• UIS Rating Curve (Single Pulse)
• 175°C Operating Temperature