The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.
Formerly developmental type TA09922.

FEATUREs
• 3A, 80V
• rDS(ON) = 0.800Ω
• Temperature Compensating PSPICE® Model
• On Resistance vs Gate Drive Voltage Curves
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175°C Operating Temperature
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”