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RF5112 Даташит - RF Micro Devices

RF5112 image

Номер в каталоге
RF5112

Компоненты Описание

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page
19 Pages

File Size
1,017.8 kB

производитель
RFMD
RF Micro Devices RFMD

Product Description
The RF5112 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WiFi applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spreadspectrum transmitters. The device is provided in a 3mmx3mmx0.9mm, 16-pin, QFN with a backside ground. The RF5112 is designed to maintain linearity over a wide range of supply voltage and power output.


FEATUREs
◾ Single Power Supply 3.0V to
   5.0V
◾ +23dBm, <4%EVM, 250mA at
   VCC=5.0V
◾ +21dBm, <4.0%EVM, 185mA
   atVCC=3.3V
◾ 28dB Typical Small Signal Gain
◾ 50 Input and Interstage Matching
◾ 2400MHz to 2500MHz Frequency Range


APPLICATIONs
◾ IEEE802.11b/g/n WiFi Applications
◾ 2.5GHz ISM Band Applications
◾ Commercial and Consumer Systems
◾ Portable Battery-Powered Equipment
◾ Spread-Spectrum and MMDS
   Systems


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