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RF5111(V2) Даташит - RF Micro Devices

RF5111 image

Номер в каталоге
RF5111

Компоненты Описание

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  2015   lastest PDF  

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page
14 Pages

File Size
167.4 kB

производитель
RFMD
RF Micro Devices RFMD

Product Description
The RF5111 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in DCS1800/1900 handheld digital cellular equipment and other applications in the 1700MHz to 2000MHz band. On-board power control provides over 65dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF5111 can be used together with the RF5110 for dual-band operation. The device is packaged in an ultra-small plastic package, minimizing the required board space.


FEATUREs
• Single 2.7V to 4.8V Supply Voltage
• +33dBm Output Power at 3.5V
• 27dB Gain with Analog Gain Control
• 50% Efficiency
• 1700MHz to 1950MHz Operation
• Supports DCS1800 and PCS1900

Typical Applications
• 3V DCS1800 (PCN) Cellular Handsets
• 3V DCS1900 (PCS) Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• GPRS Compatible


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