20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET

These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This product achieves full rated conduction at a gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49092.

FEATUREs
• 20A, 12V (N-Channel)
   10A, 12V (P-Channel)
• rDS(ON) = 0.060Ω (N-Channel)
   rDS(ON) = 0.140Ω (P-Channel)
• Temperature Compensating PSPICE® Model
• On-Resistance vs Gate Drive Voltage Curves
• Peak Current vs Pulse Width Curve
• UIS Rating Curve