DESCRIPTION
RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
This device has an internal monolithic zener diode from gate to source for ESD protection.

FEATURES
• High power gain:
   Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
• High Efficiency: 65%typ.
• Integrated gate protection diode

APPLICATION
   For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.