datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Quanzhou Jinmei Electronic  >>> RD00HVS1 PDF

RD00HVS1 Даташит - Quanzhou Jinmei Electronic

RD00HVS1 image

Номер в каталоге
RD00HVS1

Other PDF
  no available.

PDF
DOWNLOAD     

page
6 Pages

File Size
151 kB

производитель
JMNIC
Quanzhou Jinmei Electronic JMNIC

DESCRIPTION
RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


FEATURES
   High power gain
      Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz


APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.


Номер в каталоге
Компоненты Описание
PDF
производитель
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W ( Rev : 2006 )
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W ( Rev : 2010 )
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W ( Rev : 2006 )
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W ( Rev : 2006 )
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W ( Rev : 2010 )
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W ( Rev : 2010 )
MITSUBISHI ELECTRIC

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]