Product Description
The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8-2.2 GHz. The device is a single stage pre-matched power amplifier transistor.
The QPD2195 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2195 can deliver P3dB of 400 W at +48 V operation.
Lead-free and ROHS compliant.

Product Features
• Operating Frequency Range: 1.8-2.2 GHz
• Operating Drain Voltage: +48 V
• Maximum Output Power1 (P3dB): 400 W
• Maximum Drain Efficiency1: 75.4%
• Efficiency-Tuned P3dB Gain1: 19.1 dB
• 2-lead, earless, ceramic flange NI780 package
   Note 1: @ 2.11 GHz Load Pull

APPLICATIONs
• W-CDMA / LTE
• Macrocell Base Station, B3-B1
• Active Antenna