General Description
The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant
Evaluation boards are available upon request.

Product Features
• Frequency: DC to 12 GHz
• Output Power (P3dB): 11 W1
• Linear Gain: 24.0 dB1
• Typical PAE3dB: 68.8 %1
• Operating Voltage: 32 V
• Low thermal resistance package
• CW and Pulse capable
• 3 x 3 mm package
   Note 1: @ 2 GHz (Loadpull)

APPLICATIONs
• Military radar
• Civilian radar
• Land mobile and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers