Description:
Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency application. Each module consists of two MOSFET Silicon Carbide Transistors in half-bridge configuration with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

FEATUREs:
□ Junction Temperature - 200°C
□ Silicon Carbide Chips
□ Industry Leading RDS(on)
□ High Speed Switching
□ Low Switching Losses
□ Low Capacitance
□ Low Drive Requirement
□ Fast 100A Free Wheeling Schottky Diode
□ High Power Density
□ Isolated Baseplate
□ Aluminum Nitride Ceramic

APPLICATIONs:
□ High Frequency Power Supply
□ High Efficiency Inverter
□ High Temperature Environment