datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Infineon Technologies  >>> PTF080601 PDF

PTF080601 Даташит - Infineon Technologies

PTF080601 image

Номер в каталоге
PTF080601

Other PDF
  no available.

PDF
DOWNLOAD     

page
6 Pages

File Size
293.1 kB

производитель
Infineon
Infineon Technologies Infineon

Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


FEATUREs
• Broadband internal matching
• Typical EDGE performance
- Average output power = 30W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P–1dB = 90W
- Gain = 17dB
- Efficiency = 60%
• Integrated ESD protection: Human Body Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28V, 60 W (CW) output power


Номер в каталоге
Компоненты Описание
PDF
производитель
LDMOS RF Power Field Effect Transistor 10 W, 860–960 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz
Infineon Technologies
RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 30W, 26V
Tyco Electronics
RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 90W, 26V
Tyco Electronics
RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 45W, 26V
Tyco Electronics
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
TriQuint Semiconductor
LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz ( Rev : 2003 )
Infineon Technologies
LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz
Infineon Technologies
LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz
Infineon Technologies
LDMOS RF Power Field Effect Transistor 160 W, 1930 – 1990 MHz
Infineon Technologies

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]