Description
The 20187 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.80 to 2.00 GHz. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

• 4 Watts, 1.80–2.00 GHz
• Class AB Characteristics
• 30% Collector Efficiency at 4 Watts
• Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel