NXP introduces a range of high performance N-channel, logic-level MOSFETs in LFPAK

As a power design engineer, compromise is never far from your mind. Do I choose a low RDS(on) device and accept the higher output capacitance? Do I demand the lowest gate charge characteristics to reduce switching losses but then find that the package options are no longer ideal in my application?
The NextPower range of MOSFETs from NXP provides uniquely balanced characteristics across the six most important parameters essential for your latest high efficiency and high reliability designs. More performance, less compromise…

Key benefits
► High efficiency in power switching applications
► Industry’s lowest RDS(on) Power-SO8 - Less than 1 mΩ
   at 25 V and 30 V
► Low Q
   oss for reduced output losses between DRAIN &
   SOURCE
► Low Q
   gd for reduced switching losses and high frequency
   switching
► 20 V rated GATE provides better tolerance to voltage
   transients than lateral MOSFET types
► Superior ‘Safe Operating Area’ performance compared
   to other Trench MOSFET vendors
► Optimised for 4.5 V gate drive voltage
► Optimum switching performance under light & heavy
   load conditions
► LFPAK package for compatibility with other vendor
   Power-SO8 types
► Eliminates costly X-ray inspection – LFPAK solder joints
   can be optically inspected

Key applications
► Synchronous buck regulators
► DC-DC conversion
► Voltage regulator modules (VRM)
► Power OR-ing