[POWERGATE]

General Description
These N-channel enhancement mode field effect power transistor is using Powergate
semiconductor’s advanced planar stripe, DMOS technology intended for off line switch mode power supply. Also, especially designed to minimize RDS(ON) and high rugged avalanche characteristics. These devices are well suited for high efficiency switching Mode power supplies and active power factor correction.

FEATUREs
■ High ruggedness
■ RDS(ON) (Max 2.3 Ω)@VGS = 10V
■ Gate Charge (Typ. 27nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested