Номер в каталоге
PBSS4160U
производитель
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Nexperia B.V. All rights reserved
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General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.
PNP complement: PBSS5160U.
FEATUREs
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability: IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
APPLICATIONs
■ High voltage DC-to-DC conversion
■ High voltage MOSFET gate driving
■ High voltage motor control
■ High voltage power switches (e.g. motors, fans)
■ Automotive applications
Номер в каталоге
Компоненты Описание
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