Description
The PA2003 is a discrete hybrid design, which uses thick film solder manufacturing processes for accurate performance and high reliability.
This 2 stage GaAS FET transistor design uses feedback loops for flat broadband linear performance, with low noise figure. The model is particularly suited for power driver applications used in the base station & repeater infrastructure, and for commercial & military radios.

FEATUREs
• LOW NOISE FIGURE: 2.7 dB (TYP.)
• GAIN: 21 dB (TYP.)
• HIGH P1dB: +32.5 dBm (TYP.)
• HIGH IP3: +46 dBm (TYP.)
• BROADBAND RESPONSE: 1.5 GHz TO 2.2 GHz (TYP.)