Description:
The OPB710 and OPB710Fconsist of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor. 

FEATUREs:
• Phototransistor output
• Unfocused for sensing diffuse surface
• Mounted on standard TO-72 header
• Available in clear encapsulating epoxy (OPB710) or filtered (OPB710F)
​​​​​​​   to reduce the effect of visible or fluorescent light.