DESCRIPTION
The NX5315EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.

FEATURES
• Optical output power Po = 13.0 mW
• Low threshold current lth = 6 mA
• Differential Efficiency ηd = 0.5 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.35 mm

APPLICATION
• FTTH PON (B-PON, G-PON, GE-PON 10 km) system