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NTE2930 Даташит - NTE Electronics

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NTE2930

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MOSFET N–Channel, Enhancement Mode High Speed Switch

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NTE Electronics

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Features:
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Lower Input Capacitance
• Improved Gate Charge
• Extended Safe Operating Area
• Lower RDS(on): 0.032Ω Typ
• Lower Leakage Current: 10µA (Max) @ VDS = 100V

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Компоненты Описание

PDF

производитель

MOSFET N–Channel, Enhancement Mode High Speed Switch

NTE Electronics

MOSFET N–Channel, Enhancement Mode High Speed Switch

NTE Electronics

MOSFET N–Channel, Enhancement Mode High Speed Switch

NTE Electronics

MOSFET N–Channel, Enhancement Mode High Speed Switch

NTE Electronics

MOSFET N–Channel, Enhancement Mode High Speed Switch

NTE Electronics

MOSFET N–Channel, Enhancement Mode High Speed Switch

NTE Electronics

MOSFET N–Channel, Enhancement Mode High Speed Switch

NTE Electronics

MOSFET N–Channel Enhancement Mode, High Speed Switch

NTE Electronics

MOSFET N-Channel, Enhancement Mode High Speed Switch

NTE Electronics

MOSFET N−Channel, Enhancement Mode High Speed Switch

NTE Electronics

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