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ø 80 μm InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS
California Eastern Laboratories.
φ 80 μm InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS
California Eastern Laboratories.
φ 80 μm InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS
Renesas Electronics
φ 80 μm InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS
Renesas Electronics
MITSUBISHI PHOTO DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES
MITSUBISHI ELECTRIC
φ 30 μm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC
Renesas Electronics
InGaAs/InP PIN Photo Diode
Microsemi Corporation
φ 30 μm InGaAs AVALANCHE PHOTO DIO 14-PIN DIP MODULE WITH TEC
Renesas Electronics
MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES
MITSUBISHI ELECTRIC
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE
NEC => Renesas Technology