DESCRIPTION
The NP36P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −18 A)
RDS(on)2 = 40 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
• Low input capacitance
Ciss = 3200 pF TYP.
• Built-in gate protection diode