DESCRIPTION
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES
• Super low on-state resistance
   RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A)
   RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
• High current rating: ID(DC) = ±100 A