Description
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATUREs
• Super low on-state resistance
   ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current rating: ID(DC) = ±100 A
• Designed for automotive application and AEC-Q101 qualified