DESCRIPTION
The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications.
Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band.
To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure.
NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance.

FEATURES
• Internally matched to 50 Ω
• High power output
• High linear gain
• High reliability
• Low distortion