NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)

FEATURES
• The device is an ideal choice for low noise, high-gain amplification
   NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• Maximum stable power gain: MSG = 15 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 5.8 GHz
• SiGe:C HBT technology (UHS4) adopted
• Improvement of ESD protection
• 4-pin lead-less minimold (M14, 1208 PKG)