DESCRIPTION AND APPLICATIONS
This L-band linear power transistor series incorporates a Pt-Si/Ti/Pt/Au metallization system, emitter ballasting and silicon nitride passivation for performance and reliability. Avariety of hermetic packages and a plastic package are available for wide band amplifier and oscillator applications.

FEATURES
● HIGH LINEAR POWER: P1dB = 2.8 W
● HIGH GAIN: G1dB = 6.5 dB
● WIDE BANDWIDTH
● HERMETIC & LOW COST PLASTIC PACKAGES
● COMMON EMITTER