NE52118-T1(1999) Даташит - NEC => Renesas Technology
Номер в каталоге
NE52118-T1
Компоненты Описание
Other PDF
PDF
page
12 Pages
File Size
51.8 kB
производитель
NEC => Renesas Technology
FEATURES
• For Low Noise & High Gain amplifiers
NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω)
OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω)
• 4-pin super minimold package
• Grounded Emitter Transistor
Номер в каталоге
Компоненты Описание
PDF
производитель
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
California Eastern Laboratories.
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
California Eastern Laboratories.
Share Link: