NE429M01 Даташит - NEC => Renesas Technology
Номер в каталоге
NE429M01
Компоненты Описание
Other PDF
no available.
PDF
page
12 Pages
File Size
43.2 kB
производитель
NEC => Renesas Technology
DESCRIPTION
The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
• Super low noise figure & High associated gain
NF = 0.9 dB TYP., Ga = 10 dB TYP. @ f = 12 GHz
• 6-pin super minimold package
• Gate width: Wg = 200µm
Номер в каталоге
Компоненты Описание
PDF
производитель
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
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