General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology.
   
Features
■ 2.0A, 50V. RDS(ON) = 0.3Ω @ VGS = 10V
■ High density cell design for extremely low RDS(ON).
■ High power and current handling capability in a widely used
    surface mount package.
■ Dual MOSFET in surface mount package.