General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited fo low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

FEATUREs
■ 60 A, 60 V. RDS(ON) = 0.018 Ω @ VGS= 5 V
                      RDS(ON) = 0.013 Ω @ VGS= 10 V.
■ Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ 175°C maximum junction temperature rating.
■ High density cell design for extremely low RDS(ON).
■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.