General Description
These n-channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses inthe avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss, and resistance ID transients are needed.

FEATUREs
• 48and 42 Amp, 50V and60V, Ros(on) - 0.025J1 and
   0.028Ω
• Critical DCelectrical parameters specified at elevated
   temperature
• Rugged internal source-drain diode eliminates the need
   for external Zener Diode Transient Suppressor
• 175*C maximum Junction temperature rating
• Easily paralleled for higher current applications
• High density cell design (3 million/in2) for extremely low
   RDS(on)
• Lower RDS(on) temperature coefficient