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N04L163WC2AB2 Даташит - NanoAmp Solutions, Inc.

N04L163WC2AB image

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N04L163WC2AB2

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11 Pages

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180 kB

производитель
NANOAMP
NanoAmp Solutions, Inc. NANOAMP

The N04L163WC2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power


FEATUREs
• Single Wide Power Supply Range 2.3 to 3.6 Volts
• Very low standby current 4.0μA at 3.0V (Typical)
• Very low operating current 2.0mA at 3.0V and 1μs (Typical)
• Very low Page Mode operating current 0.8mA at 3.0V and 1μs (Typical)

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Номер в каталоге
Компоненты Описание
PDF
производитель
4Mb Ultra-Low Power Asynchronous CMOS SRAM
NanoAmp Solutions, Inc.
4Mb Ultra-Low Power Asynchronous CMOS SRAM
Unspecified
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
Unspecified
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
NanoAmp Solutions, Inc.
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit
NanoAmp Solutions, Inc.
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit
NanoAmp Solutions, Inc.
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit
ON Semiconductor
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
NanoAmp Solutions, Inc.
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit
ON Semiconductor
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
Unspecified

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