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MX043J Даташит - Microsemi Corporation

MX043G image

Номер в каталоге
MX043J

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4 Pages

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112.2 kB

производитель
Microsemi
Microsemi Corporation Microsemi

Features
• Harris FSC260R die
• total dose: 100 kRAD(Si) within pre-radiation parameter limits
• dose rate: 3 x 109RAD(Si)/sec @ 80%BVDSS typical
• dose rate: 2 x 1012RAD(Si)/sec @ ID £IDM typical
• neutron: 1013 neutrons/cm2 within pre-radiation parameter limits
• photocurrent: 17 nA/RAD(Si)/sec typical
• rated Safe Operating Area Curve for Single event Effects
• rugged polysilicon gate cell structure with ultrafast body diode
• low inductance surface mount power package available with “J-leads” (MX043J) or “gullwing-leads” (MX043G)
• very low thermal resistance
• reverse polarity available upon request add suffix “R”st

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производитель
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
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Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
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Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Intersil
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Intersil
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Intersil
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Intersil
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Intersil
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
Intersil

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