This Power MOSFET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

Features
•Silicon Gate for Fast Switching Speeds − Switching Times Specified at 100°C
•Designer’s Data − IDSS, VDS(on), VGS(th)and SOA Specified at Elevated Temperature
•Rugged − SOA is Power Dissipation Limited
•Source−to−Drain Diode Characterized for Use With Inductive Loads
•Pb−Free Package is Available*