Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate TWOS

These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

• Silicon Gate for Fast Switching Speeds — Switching Times
   Specified at 100°C
• Designers Data — IDSS- VGS(on)- VGS(th) and SOA Specified
   at Elevated Temperature
• Rugged — SOA is Power Dissipation Limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads