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MT28F320A18FF-70BET Даташит - Micron Technology

MT28F320A18FF-70B image

Номер в каталоге
MT28F320A18FF-70BET

Компоненты Описание

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37 Pages

File Size
345.6 kB

производитель
Micron
Micron Technology Micron

GENERAL DESCRIPTION
The MT28F320A18 is a nonvolatile electrically block-erasable (Flash) memory containing eight 4-Kword parameter blocks and sixty-three 32K-word main blocks.


FEATURES
• 32Mb block architecture
    Seventy-one erasable blocks:
    Eight 4K-word parameter blocks
    Sixty-three 32K-word main memory blocks
• VCC, VCCQ, VPP voltages*
    1.65V (MIN), 1.95V (MAX) VCC, VCCQ
    0.9V (MIN), 1.95V (MAX) VPP (in-system
    PROGRAM/ERASE)
    12V ±5% (HV) VPP tolerant (factory programming
    compatibility)
• Random access time: 70ns @ 1.65V VCC
• Low power consumption (VCC = 1.8V)
    Asynchronous Read < 18mA
    Write/Erase < 40mA (MAX)
    Standby < 50µA (MAX)
    Automatic power saving feature (APS)
• Enhanced write and erase suspend options
    ERASE-SUSPEND-to-READ
    PROGRAM-SUSPEND-to-READ
    ERASE-SUSPEND-to-PROGRAM
• Dual 64-bit chip protection registers for security purposes
• Cross-compatible command support
    Extended command set
    Common flash interface
• PROGRAM/ERASE cycle
    100,000 WRITE/ERASE cycles per block (VPP = VPP1)

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Номер в каталоге
Компоненты Описание
PDF
производитель
FLASH MEMORY
Samsung
FLASH MEMORY
Samsung
FLASH MEMORY
Samsung
FLASH MEMORY
Micron Technology
FLASH MEMORY
Samsung
FLASH MEMORY
Samsung
FLASH MEMORY
Micron Technology
FLASH MEMORY
Micron Technology
FLASH MEMORY
Samsung
FLASH MEMORY
Samsung

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